Plasma photoresist stripper



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Two forms of plasma ashing are typically performed on wafers. Tergeo plasma cleaner uses fully automatic mass flow controller MFC to precisely regulate gas flow rate from 0 to sccm with accuracy better than 0. Additionally, the UV-Ozone ashing processes use only oxygen radicals. Related with the lithography process, photoresist removal after etching or ion implantation is a critical process in device production. In addition, PIE Scientific developed a unique plasma sensor technology that can quantitatively monitor the plasma strength in real time. In some basic plasma systems, user needs to manually adjust needle valve to introduce gas into the plasma chamber.
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Plasma Resist Strippers


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Photoresist Processing - Etching and Stripping - Stripping / Removal


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Let us find the best system to meet your process demands for photoresist removal. Samples are placed on grounded electrode. UV-Ozone Ashing of Photoresist. Semiconductor device production processes are getting more complicated in order to achieve high performance, and lithography is one of the key processes for next-generation devices.
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